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 TLP350
Preliminary
TOSHIBA Photocoupler GaAAs IRED + Photo IC
TLP350
Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter
The TOSHIBA TLP350 consists of a GaAAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP350 is suitable for gate driving circuit of IGBT or power MOS FET.. * * * * * * * * Peak output current: IO = 2.0 A (max) Guaranteed performance over temperature: -40 to 100C Supply current:ICC = 2 mA (max) Power supply voltage: VCC = 15 to 30 V Threshold input current : IFLH = 5 mA (max) Switching time (tpLH/tpHL) : 500 ns (max) Common mode transient immunity: 15 kV/s Isolation voltage: 3750 Vrms JEDEC 11-10C4 Unit: mm
Truth Table
Input H L LED ON OFF Tr1 ON OFF Tr2 OFF ON Output H L
JEITA TOSHIBA
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1: NC 2: Anode 3: Cathode 4: NC 5: GND 6: VO (output) 7: NC 8: VCC
Schematic
(Tr1) IF 2+ VF 3- (Tr2) IO 6 VO 5 GND A 0.1 F bypass capacitor must be connected between pin 8 and 5. (See Note 6) ICC 8 VCC
1 2 3 4
8 7 6 5
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TLP350
Maximum Ratings (Ta = 25C)
Characteristics Forward current Forward current derating (Ta 85C) LED Peak transient forward current Reverse voltage Junction temperature "H" peak output current Detector "L" peak output current Output voltage Supply voltage Junction temperature Operating frequency Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 minute, R.H. 60%) (Note 5) (Note 6) (Note 4) (Note 2) (Note 2) (Note 3) (Note 3) (Note 1) Symbol IF IF/Ta IFP VR Tj IOPH IOPL VO VCC Tj f Tstg Topr Tsol BVS -55 to 125 -40 to 100 260 3750 Rating 20 -0.54 1 5 125 -2.0 2.0 35 35 125 Unit mA mA/C A V C A A V V C kHz C C C Vrms
Note 1: Pulse width PW 1 s, 300 pps Note 2: Exponential waveform pulse width PW s, f Note 3: Ta 100 C A ( s), IOPL + A ( s),Ta = C kHz
Note 4: Exponential waveform IOPH
Note 5: It is 2 mm or more from a lead root. Note 6: Device considerd a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Note 7: A ceramic capacitor(0.1 F) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristics Input current, ON Input voltage, OFF Supply voltage Peak output current Operating temperature (Note 8) Symbol IF (ON) VF (OFF) VCC IOPH/IOPL Topr Min 7.5 0 15 -40 Typ. Max 10 0.8 30 1.0 100 Unit mA V V A C
Note 8: Input signal rise time (fall time) < 0.5 s.
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TLP350
Electrical Characteristics (Ta = -40 to 100C, unless otherwise specified)
Characteristics Forward voltage Temperature coefficient of forward voltage Input reverse current Input capacitance "H" Level (Note 9) Symbol VF VF/Ta IR CT IOPH1 IOPH2 IOPL1 IOPL2 VOH VOL ICCH ICCL IFLH VFHL VCC VUVLO+ VUVLOTest Circuit 1 Test Condition IF = 5 mA, Ta = 25C IF = 5 mA VR = 5 V, Ta = 25C V = 0 , f = 1 MHz,Ta = 25C VCC = 30 V IF = 5 mA VCC = 30 V IF = 0 mA VCC 1= +15 V VEE 1= -15 V VCC = 30 V VO open V8-6 = 4.0 V V8-6 = V6-5 = 2.0 V V6-5 = IO = -100 mA, IF = 5 mA IO = 100 mA, VF = 0.8 V IF = 10 mA IF = 0 mA 11 0.8 15 11.0 9.5 1.0 2.0 Min -1.0 Typ.* 1.55 -2.0 45 -1.5 Max 1.70 10 V 1.0 2.0 2.0 5 30 13.5 12.0 mA mA V V A Unit V mV/C A pF
Output current
"L" Level "H" Level
2 3 4 5 6
Output voltage "L" Level Supply current Threshold input current Threshold input voltage Supply voltage UVLO thresh hold "H" Level "L" Level LH HL
VCC 1= +15 V VEE 1= -15 V, VO > 0 V VCC 1= +15 V VEE 1= -15 V, VO < 0 V VO > 2.5 V , IF = 5 mA , IO=100 mA

V V
*: All typical values are at Ta = 25C Note 9: Duration of IO time 50 s Note 10: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component.
Isolation Characteristics (Ta = 25C)
Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition V = 0,f = 1MHz VS = 500 V, Ta = 25C, R.H. 60% AC,1 minute Isolation voltage BVS AC,1 second,in oil DC,1 minute,in oil (Note6) (Note6) Min. 1x10
12
Typ. 0.8 10
14
Max.
Unit pF
3750
10000 10000
Vrms Vdc
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TLP350
Switching Characteristics (Ta = -40 to 100C, unless otherwise specified)
Characteristics LH HL Symbol tpLH tpHL PDD |tpHL-tpLH| tr tf CMH 8 CML 7 Test Circuit Test Condition VCC 1= +15 V IF = 0 5 mA VEE 1= -15 V Rg = 20 IF = 5 0 mA Cg = 10 nF VCC 1= +15 V , VEE 1= -15 V, Rg = 20 , Cg = 10 nF VCC 1= +15 V IF = 0 5 mA VEE 1= -15 V Rg = 20 IF = 5 0 mA Cg = 10 nF IF = 5 mA VCM = 1000 Vp-p VO (min) =26V Ta = 25C IF = 0 mA VCC = 30 V VO (max) =1V Min 50 50 -15000 15000 Typ.* 250 250 Max 500 500 450 V/s ns Unit
Propagation delay time
ns
Propagation delay difference between any two parts or channels Output rise time (10-90%) Output fall time (90-10%) Common mode transient immunity at hight level output Common mode transient immunity at low level output
ns
*: All typical values are at Ta = 25C
Test Circuit 1: IOPH
1 IF 4 5 8 V8-6 A IOPH VCC
Test Circuit 2: IOPL
1 8
IOPL A 4 5 V6-5
VCC
Test Circuit 3: VOH
1 IF 4 5 8 V VOH VCC1
Test Circuit 4: VOL
1 8 VCC1 VF VEE1 4 V VOL VEE1
5
Test Circuit 5: ICCH
1 IF 4 8 ICCH A VCC 5
Test Circuit 6: ICCL
1 8 ICCL A VCC 4 5
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TLP350
Test Circuit 7: tpLH, tpHL, tr, tf, PDD
8 0.1 F VO Rg = 20 Cg = 10 nF 5 VEE1 VCC1 IF tr tf VOH 80% GND 80% tpLH tpHL VOL
1 IF
4
VO
Test Circuit 8: CMH, CML
1 8 0.1 F VCM VO VCC 90% 10% tr * SW A: IF = 5 mA 5 + VCM - VO V * SW B: IF = 0 mA V CML tf CMH 1000 V
SW A B
IF
4
CML = CMH =
800 V tf (s) 800 V tr (s)
CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state.
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TLP350
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EBC
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
6
2003-10-27


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